PCIM Asia 2020

International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management Proceedings, 16 – 18 November 2020, Shanghai, China

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Guangzhou Guangya Messe Frankfurt Co Ltd. (Hg.), PCIM Asia 2020 (2020), VDE Verlag, Berlin, ISBN: 9783800753888

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Beschreibung / Abstract

The PCIM is targeting important innovations in the field of power electronics system engineering, the new generation of power devices and packaging technologies. For companies the PCIM is the worldwide leading event to launch new components and power conversion units in the market. Power electronic experts and scientist are presenting their latest research results dur-ing the conference. Decision makers from companies and academia use the PCIM platform to generate new market segments and trigger future research directions. Within the last dec-ade power electronics technology has become the driving forces for many new fields of applications such as all electric transportation systems, future renewable energy technologies and factory automation systems. The PCIM Asia Conference and Exhibition serves as a technical and scientific platform for engineers and researchers engaged in all fields of power electronics starting from power components, power converter technologies, and future smart control systems.

Inhaltsverzeichnis

  • PCIM Asia 2020
  • Imprint
  • Welcome Adress
  • Advisory Board
  • Content
  • Keynote
  • 1 Communication-less Coordinative Control of Distributed Energy Source Converters
  • High Power Density Converters
  • 2 Visualization of Noise Current Distribution in Power Module
  • 3 78 W Auxiliary Power Supply for 22-KW Drive Using 1700 V Silicon Carbide MOSFET
  • 4 Experimental Demonstration of Superior Vf-Err Characteristics of pin Body Diode in 1.2 kV IE-UMOSFET with a Very Short Channel Length
  • AC/DC Converters
  • 5 Active Neutral-Point-Clamped (ANPC) Three-Level Converter for High-Power Applications with Optimized PWM Strategy
  • 6 SiC-Based High-Density Charger Plie Power Module Design
  • 7 Asymmetrical IGBT Design for Three-Level NPC1 Converter in a Bidirectional Power Conversion System
  • High Power Devices
  • 8 Determination of Commutation Inductance for High-Power Semiconductors on a 3-phase DC-Link
  • 9 4500 V HiPak IGBT Module Rated for 1500 A and 150 °C for High Application
  • 10 The Application Benefit of X-series 6.5 kV / 900 A HVIGBT for Rolling Stock
  • 11 600 A / 1200 V S3+ IGBT Module with Fine Geometry Trench IGBT Technology for EV/HEV Application
  • 12 High Reliability HPnC Module for Traction Applications with 7th Generation IGBT Technology
  • Intelligent Gate Drive
  • 13 An Intelligent IGBT Gate Driver IC with Temperature Compensated Gate Side Collector Current Sensing
  • 14 Optimize the Integrated Overcurrent Protection of Gate Driver ICs for Current Sense Range Extension
  • 15 Using 1200 V Three-Phase Gate Driver to Drive SiC MOSFETs
  • 16 Foldback Current Limiting Design and Optimization for Hot-Swap and E-Fuse Ics
  • 17 Operation of a Digitally-Controlled IGBT Gate-Driver with Advance Protection Features During Short-Circuit Type II Conditions
  • Advanced Power Devices I
  • 18 Research on Photovoltaic Grid Connected System Based on MMC
  • 19 Study on IMC Growth Behavior during Multiple Reflowing and Thermal Shock Tests of IGBT Module
  • 20 On-State Characteristics Measurement of SiC MOSFET
  • 21 High Power Density Low Loss 3600 A / 1700 V IGBT E2 Module with New Generation IGBT Technology
  • 22 Turn-Off Switching Loss Analysis Associated With Channel Path in Super Junction MOSFET
  • 23 Robust Buffer Layer of 650 V Super-Junction MOSFET
  • 24 3D-Printed Fluid-Cooler Baseplate for Si-IGBT Modules
  • Advanced Power Devices II
  • 25 Cascaded Control of High-Frequency Bidirectional Multi-Phase Boost Converters Implemented on Low-Cost FPGA
  • 26 Advanced 3.3 kV Full SiC MOSFET Module for Vehicle Control Metro Inverters
  • 27 New Generation 800-V SUPERFET III MOSFET for High Efficiency and Reliability in Low-Power Applications
  • 28 Experimental Analysis of the Current-Carrying Capacity of Discrete IGBTs in TO-247-Based Packages
  • 29 Balancing the Switching Losses of Paralleled SiC MOSFETs Using an Intelligent Gate Driver
  • Keynote
  • 30 The Latest Technical Trend of Power Device for E-mobility
  • Special Session – High-Speed Railway Power Traction
  • 31 Power Conversion Technologies in Green Transportation of China
  • 32 Discussion on Reactive Power Regulation of On-Board Converter of Locomotive
  • 33 Control in Flux-Weakening Region of PMSM for Rail Transit
  • 34 Sensorless Control of Induction Motors for Electric Locomotive Traction System
  • Fast Switching Devices
  • 35 High dV/dt Controllability of 1.2 kV TCIGBT through Dynamic Avalanche Elimination
  • 36 Effect of Process and Surface Metallization on Interfacial Reaction of Siliver Sintered Joint for Power Devices
  • 37 Power Semiconductor Reliability under High Humidity
  • 38 Thermal Management for Buck Converters Using Co-Packaged GaN Power HEMTs
  • Advanced Packaging Technologies
  • 39 All SiC Module for Traction Inverters with 1st Generation Trench Gate SiC MOSFETs
  • 40 Optimized Power Module Terminal Design for Higher Reliability
  • 41 Fourth Generation Aluminum Direct Water Cooling Structure with High Reliability for Automotive Electric System
  • 42 Power Package Attach by Silver Sintering – Process, Performance & Reliability
  • 43 Advanced Power Module Technologies for Wide Band Gap Devices
  • Advanced Power Converters Design
  • 44 Comparison of 3-Level Topologies NPC and ANPC under the Aspect of Low Voltage Ride Through, SiC and Energy Storage Capability
  • 45 A DC-link Voltage Estimation Based Active Damping Control Method of Singlephase Reduced DC-link Capacitance Motor Drives
  • 46 An Integrated Servo Motor Drive with Self-Cooling Design using SiC MOSFETs
  • 47 Research and Application of Solid State DC Circuit Breaker Based on SiC Series and Parallel
  • 48 Estimation of the Battery Capacity in the Microgrid of a Nearly Zero Energy Building According to the Desired Degree of Energy Autonomy
  • Advanced Power Devices III
  • 49 High Power and High Integration Transfer-Mold Type IPM
  • 50 A Half-Bridge LLC Converter Based on Digital Control
  • 51 Simple Constitution Reducing Noise Peak Dc-Dc Converter Introducing Advanced Modulation Scheme
  • 52 Experiment-Based Investigation of Thermal Cross-Coupling of Chips in High-Power IGBT Modules
  • 53 Design of Electric Vehicle Hybrid Power Supply Discharge Control Strategy
  • 54 A Low Cost and High Efficiency Gate Driver for EV Module
  • 55 Optimum Selection of 650-V SUPERFET III MOSFETs for System Efficiency, EMI and Reliability
  • Advanced Power Devices IV
  • 56 Comparison of Two Types of PR-Repetitive Control Strategies Applied to Static Var Generator
  • 57 Research on Security Boundary of Active Power Distribution System with Distributed Energy Storage
  • 58 Flexible and General Strategy of Space Vector Modulation for Multilevel Converters
  • 59 Technical Cleanliness in Electronics Manufacturing
  • 60 Mitigation of IGBT Gate Oscillation during Short Circuit through Module Layout Improvement
  • 61 Numerical and Experimental Study on Improving the Surge Current Capability of IGBT Power Modules
  • 62 Hardware-in-Loop Simulation of Real-Time Cyber-Physical System for DC Microgrids
  • 63 Research on Key Technology Points for MMC-HVDC System
  • Keynote
  • 64 Compact and Reliable Isolated DC/DC and SiC Gate Driver for Automotive Application
  • DC/DC Converters
  • 65 Efficiency and Robustness Analysis of a Novel SiGe Diode Utilized in a High Frequency 48 V / 12 V DC/DC Converter
  • 66 GaN, SiC or Silicon Mosfet – A Comparison Based On Power Loss Calculations
  • 67 Discussion of Junction Capacitance of SiC Schottky Diode on Soft-Switching Condition of LLC Resonant Converter with Cockcroft-Walton Voltage Multiplier for High-Voltage Generator
  • 68 SiC Power Device Hammer and Burn-In System
  • Authors Index
  • Your opinion matters!

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