Leakage Current and Defect Characterization of Short Channel MOSFETs
Guntrade Roll
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Guntrade Roll, Leakage Current and Defect Characterization of Short Channel MOSFETs (2012), Logos Verlag, Berlin, ISBN: 9783832596668
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Beschreibung / Abstract
The continuous improvement in semiconductor technology requires field effect transistor scaling while maintaining acceptable leakage currents. This study analyzes the effect of scaling on the leakage current and defect distribution in peripheral DRAM transistors. The influence of important process changes, such as the high-k gate patterning and encapsulation as well as carbon co-implants in the source/drain junction are investigated by advanced electrical measurements and TCAD simulation. A complete model for the trap assisted leakage currents in the silicon bulk of the transistors is presented.
Inhaltsverzeichnis
- BEGINN
- 1 Introduction
- 2 Fundamentals of Leakage Currents in MOSFET Devices
- 2.1 Leakage through Gate Oxide
- 2.2 Subthreshold Leakage from Source to Drain
- 2.3 Leakage from Silicon Space Charge Regions to Transistor Bulk
- 3 Methodology
- 3.1 Current Voltage Measurement
- 3.2 Capacitance Voltage Measurement
- 3.3 Charge Pumping Measurement
- 3.4 Simulation
- 4 Impact of Implant Variations on PFET Leakage Current
- 4.1 Process Flow
- 4.2 TCAD Simulation of the Process
- 4.3 Interface Traps
- 4.4 Electrical Measurement and Simulation of Leakage Current
- 4.5 Carbon Implantation into Junction Extension
- 4.6 Arsenic and Phosphorus Implantation for Threshold Voltage Control
- 5 Impact of High-k Process Adjustment on Transistor Leakage Current
- 5.1 High-k Process Flow
- 5.2 TCAD Simulation of the Process
- 5.3 Interface Traps
- 5.4 Electrical Measurement and Simulation of Leakage Current
- 5.5 Comparison of Silicon Oxide and Silicon Nitride Extension Spacer
- 5.6 Germanium Implantation during Gate Patterning
- 6 Summary and Outlook
- 6.1 Leakage Currents and Defect Distribution
- 6.2 Carbon in the Junction Extension
- 6.3 Vth- and Halo Implant
- 6.4 Silicon Oxynitride vs. Hafnium Silicon Oxide Gate Dielectric
- 6.5 Outlook
- 7 Bibliography
- 8 Personal Bibliography