Heterojunction Solar Cells (a-Si/c-Si): Investigations on PECV Deposited Hydrogenated Silicon Alloys for use as High-Quality Surface Passivation and Emitter/BSF
Thomas Mueller
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Thomas Mueller, Heterojunction Solar Cells (a-Si/c-Si): Investigations on PECV Deposited Hydrogenated Silicon Alloys for use as High-Quality Surface Passivation and Emitter/BSF (2009), Logos Verlag, Berlin, ISBN: 9783832597375
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Beschreibung / Abstract
The main focus of the present work is related to the optimization of heterojunction solar cells. The key roles in obtaining high efficient heterojunction solar cells are mainly the plasma enhanced chemical vapor deposition of very low defect layers, and the sufficient surface passivation of all interfaces. In heterojunction solar cells, the a-Si:H/c-Si hetero-interface is of significant importance, since the hetero-interface characteristics directly affect the junction properties and thus solar cell efficiency.
In this work, the deposition and film properties of various hydrogenated amorphous silicon alloys, such as a-SiC:H, a-SiOࢂŠx:H, and μc-Si:H (standard a-Si:H is used as reference), are employed. Special attention is paid to (i) the front and back surface passivation of the bulk material by high-quality wide-gap amorphous silicon suboxides (a-SiOࢂŠx:H), and (ii) the influence of wide-gap high-quality a-Si- and μc-Si-based alloys for use as emitter and back-surface-field.
In this work, the deposition and film properties of various hydrogenated amorphous silicon alloys, such as a-SiC:H, a-SiOࢂŠx:H, and μc-Si:H (standard a-Si:H is used as reference), are employed. Special attention is paid to (i) the front and back surface passivation of the bulk material by high-quality wide-gap amorphous silicon suboxides (a-SiOࢂŠx:H), and (ii) the influence of wide-gap high-quality a-Si- and μc-Si-based alloys for use as emitter and back-surface-field.
Inhaltsverzeichnis
- BEGINN
- 1 Introduction
- 1.1 Heterojunction solar cells: State of technology
- 1.2 Thesis motivation
- 1.3 Outline
- 2 Basic aspects of heterojunction solar cell physics
- 2.1 Generation, recombination, and carrier lifetime in silicon
- 2.2 Characteristics of solar cells
- 2.3 a-Si:H/c-Si heterojunction solar cells
- 3 Sample preparation and characterization methods
- 3.1 Preparation of a-Si:H/c-Si heterostructures
- 3.2 Spectroscopic ellipsometry measurements
- 3.3 μ-Raman spectroscopy
- 3.4 Conductivity
- 3.5 Solar cell characterization
- 3.6 Effective carrier lifetime
- 4 Wide-gap a-SixC1−x:Hy layers for use as emitter
- 4.1 Introduction
- 4.2 Experiment: Hydrogenated amorphous carbon silicon alloys (a-SiC:H)
- 4.3 Optical analysis
- 4.4 μ-Raman spectroscopy
- 4.5 Electrical characterization
- 4.6 Effects on the solar cell properties
- 4.7 Chapter summary
- 5 Wide-gap μc-Si:H layers for use as emitter and BSF
- 5.1 Introduction
- 5.2 Experimental details
- 5.3 p+ doped μc-Si:H layer
- 5.4 n+ doped μc-Si:H layer
- 5.5 Chapter summary
- 6 Surface recombination of a-SiOx:H passivated c-Si
- 6.1 Introduction
- 6.2 Previous work
- 6.3 Experimental details for a-SiOx:H
- 6.4 Optimization of a-SiOx:H PECV deposition parameters
- 6.5 Compositional analysis of a-SiOx:H
- 6.6 Surface passivation quality of a-SiOx:H
- 6.7 Chapter summary
- 7 Heterojunction cells passivated using a-SiOx:H
- 7.1 Introduction
- 7.2 Experimental
- 7.3 Heterojunction cells using polished FZ-Si
- 7.4 Heterojunction cells using textured FZ-Si
- 7.5 Chapter summary
- 8 Summary
- 8.1 General conclusions